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  1. Contamination in an experimental gallium arsenide etch system.

    Article - En anglais

    A study in a university setting was undertaken on the by-products which accumulated within a plasma etching reactor system from two years of sporadic dry etching of gallium arsenide wafers.

    The deposits on the reactor chamber walls, in the vaccum pump oil dans its filter, in the oil mist eliminator, and in the exhaust charcoal canister were analyzed for 33 elements by simultaneous inductively coupled plasma atomic emission spectroscopy.

    Mots-clés Pascal : Pollution intérieur, Exposition professionnelle, Fabrication microélectronique, Gallium Arséniure, Analyse élémentaire, Contrôle, Formation polluant, Gravure plasma, Spectrométrie émission, Spectrométrie ICP, Hydrocarbure halogéné, Etude expérimentale

    Mots-clés Pascal anglais : Indoor pollution, Occupational exposure, Microelectronic fabrication, Gallium Arsenides, Elementary analysis, Check, Pollutant creation, Plasma etching, Emission spectrometry, Inductive coupling plasma spectrometry, Halocarbon, Experimental study

    Logo du centre Notice produite par :
    Inist-CNRS - Institut de l'Information Scientifique et Technique

    Cote : 91-0212676

    Code Inist : 001D16C06. Création : 199406.